型号:

IRF6645TRPBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 100V 5.7A DIRECTFET
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRF6645TRPBF PDF
产品目录绘图 IR Hexfet Circuit
标准包装 1
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 5.7A
开态Rds(最大)@ Id, Vgs @ 25° C 35 毫欧 @ 5.7A,10V
Id 时的 Vgs(th)(最大) 4.9V @ 50µA
闸电荷(Qg) @ Vgs 20nC @ 10V
输入电容 (Ciss) @ Vds 890pF @ 25V
功率 - 最大 3W
安装类型 表面贴装
封装/外壳 DirectFET? 等容 SJ
供应商设备封装 DIRECTFET? SJ
包装 剪切带 (CT)
配用 IRAUDAMP5-ND - BOARD DEMO IRS2092S/IRF6645
IRAUDAMP4-ND - KIT 2CH 120W HALF BRDG AUDIO AMP
其它名称 IRF6645TRPBFCT
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